^e.mi-donaucto'l ^pi , u na. silicon control ed rectifier s es 150c to209ab (t093) notes: 1. 3/4-16 unf-3a 2. full thread within 2 1/2 threads 3. for insulated cathode lead, add suffix "il" to catalog number dim a b c d e f g h j k m n p r s t u v w x y z aa inches minimum ._ 1.237 1.350 7.428 7.382 1.047 .365 .660 .338 .625 .140 ,295 .620 .276 .065 .245 .243 .770 .120 maximum ___ 1.243 1.360 7.671 8.100 1.077 .385 1.383 .749 .348 .687 .150 .295 1.125 .305 2.550 .630 .286 .075 .255 .790 .130 millimeter minimum 31.42 34.29 - 188.67 187.50 26.59 9.27 16.76 8.59 15.88 3.56 7.49 15.75 7.01 1.65 6.22 6.17 19.56 3.05 maximum notes 1 31.57 34.54 194.84 205.74 27.36 9.78 35.13 19.02 2 8.84 did. 17.45 3.81 7.49 28.56 dia, 7.75 64.77 16.00 7.26 dia. 1.91 dia. 6.48 20.07 3.30 150c60b 150c80b 150C100B 150c120b to specify dv/dt forward & reverse repetitive blocking 600 800 1000 1200 add suffix "f" for flag higher than 200v/usec reverse transient blocking 700 900 1100 1300 lead , contact factory. ? high dv/dt- 200 v/usec. ? 3000 amperes surge current capability ?low forward on -state voltage ? primarily for line commutated converters ? economical for general purpose phase control applications electrical characteristics max. rms on-state current max. average on-state cur. max. peak on-state voltage max. holding current max. peak one cycle surge current max. i2t capability for fusing 1 t(rms) 235 amps it(av) 150 amps vtm 1.6 volts ih 200 ma 'tsm 3000 a i2t 37,oooa2s tc tc "tm tc t = = 73c = 73c = 500 a(peak) - 73c, 60hz 8.3 ms thermal and mechanical characteristics operating junction temp range storage temperature range maximum thermal resistance typical thermal resistance (greased) mounting torque weight tj tstg sex r ecs .-65c to 125c -65c to 150c 0.20"c/w junction to case 0.40c/w case to sink 250-300 inch pounds 7.4 ounces (211.1 grams) typical quality semi-conductors
switching critical rate of rise of on-state current (note 1) typical delay time (note 1) typical circuit commuted turn-off time (note 2) di/dt 100a/usec. 3.0 usec. 100 usec. tj = 125c tj = 125c note 1: 'tm = 100a,v 0 =vdrm, vgt = 12v open circuit, 20 ohm-0.1 usec rise time - note 2: ]tm = 100a, di/dt = 5a/usec,vr during turn-off internal = 50v min, reapplied dv/dt = 20v/usec., linear to rated vdrm, vgt = 0v triggering max. max, max. max. gate voltage to trigger nontriggering gate voltage gate current to trigger peak gate power average gate power max. max. max. peak gate current peak gate voltage (forward) peak gate voltage (reverse) vgt vgd pgt pgm pg(av) 1 gm vgm vgm 3.0v 0.25v 150ma 10w 2.0w 2.0a 10v 5.0v tj = 25 c tj = 125c tj = 25c tp = 10 usec. blocking max. leakage current 'drm max. reverse leakage 'rrm critical rate of rise of off-state voltage dv/dt 20ma 20ma 200v/usec. tj =i25c & tj =125c &vrrm tj =125c
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